Investigation of the properties of SiGe islands by selective wet chemical etching and scanning probe microscopy
نویسنده
چکیده
•-450 • C) die gleiche ist, wie die der freistehenden Inseln. Für die Inseln, die bei 580 • C ¨ uberwachsen worden sind, zeigt es sich, dass trotz morphologischen¨Anderungen der Ge-reiche Teil noch existiert. Dieses weisst darauf hin, dass zumindestens bis zur Temperatur von 580 • C keine Massendiffusion stattfindet.
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